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Casa > produtos > Componentes eletrônicos CI > JANTXV1N6640/TR

JANTXV1N6640/TR

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Description: DIODE GEN PURP 50V 300MA DO35

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1 V @ 200 mA
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/609
Capacitance @ Vr, F:
-
Supplier Device Package:
DO-35 (DO-204AH)
Reverse Recovery Time (trr):
4 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
300mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1 V @ 200 mA
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/609
Capacitance @ Vr, F:
-
Supplier Device Package:
DO-35 (DO-204AH)
Reverse Recovery Time (trr):
4 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
300mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
JANTXV1N6640/TR
Diodo 50 V 300 mA através do buraco DO-35 (DO-204AH)