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MURT10020R

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Description: DIODE ARRAY GP REV POLAR 3TOWER

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Category:
Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Product Status:
Obsolete
Current - Average Rectified (Io) (per Diode):
50A
Operating Temperature - Junction:
-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 50 A
Package:
Bulk
Series:
-
Diode Configuration:
1 Pair Common Anode
Supplier Device Package:
Three Tower
Reverse Recovery Time (trr):
75 ns
Mfr:
GeneSiC Semiconductor
Technology:
Standard, Reverse Polarity
Package / Case:
Three Tower
Voltage - DC Reverse (Vr) (Max):
200 V
Mounting Type:
Chassis Mount
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:
25 µA @ 50 V
Category:
Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Product Status:
Obsolete
Current - Average Rectified (Io) (per Diode):
50A
Operating Temperature - Junction:
-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 50 A
Package:
Bulk
Series:
-
Diode Configuration:
1 Pair Common Anode
Supplier Device Package:
Three Tower
Reverse Recovery Time (trr):
75 ns
Mfr:
GeneSiC Semiconductor
Technology:
Standard, Reverse Polarity
Package / Case:
Three Tower
Voltage - DC Reverse (Vr) (Max):
200 V
Mounting Type:
Chassis Mount
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:
25 µA @ 50 V
MURT10020R
Diodo 1 par Anodo comum 200 V 50A Chassis Mount Three Tower